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A silicon carbide (SiC) injection enhanced gate transistor with accumulation channel (AC-IEGT) is proposed in this letter, which has a barrier layer with small windows under the p+ shielding region. The new structure can enhance electron injection through accumulation channel. Thus, an optimized carrier density can be obtained in the emitter side. Compared with conventional SiC insulated gate bipolar...
Recently, silver paste, silver epoxy, and solders were commonly used as die-attach materials for power electronic packaging. Thermal performance of these materials should be paid attention to since reliability of sintered or soldered jointsis highly dependent on the thermal performance. To accurately investigate the transient thermal behavior of sintered or soldered joints in electronic applications,...
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