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GaN devices for high‐frequency and high‐power applications often need n‐doped GaN layers on top of their structures. Such layers can be either grown in an epitaxial reactor or formed by implantation or annealing of Si‐containing layers (e.g., a SiO2 mask). These processes are typically performed at high temperatures, which generate the undesired effect of atom diffusion between the different epitaxial...
AlGaN/GaN High Electron Mobility Transistors (HEMTs) require a semi‐insulating buffer to compensate a high background donor concentration and to prevent parasitic effects, such as parallel conduction. Iron and carbon are typical impurities used for such purpose, since they can behave as deep acceptors in GaN layers. The former (Fe) brings as drawback a well‐known memory effect which consists in the...
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