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We have developed a novel AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor using a stack gate HfO2/Al2O3 structure grown by atomic layer deposition. The stack gate consists of a thin HfO2 (30-A) gate dielectric and a thin Al2O3 (20- A) interfacial passivation layer (IPL). For the 50-A stack gate, no measurable C-V hysteresis and a smaller threshold voltage shift were observed,...
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