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We have applied real-time spectroscopic ellipsometry (SE) and infrared attenuated total reflection spectroscopy (ATR) simultaneously to study microscopic growth processes of amorphous and microcrystalline Si:H thin films. In the microcrystalline silicon (μc-Si:H) growth by plasma-enhanced chemical vapor deposition, real-time SE results revealed μc-Si:H nucleation from the amorphous phase, followed...
The fundamental aspects of the growth of microcrystalline silicon are discussed in terms of the gas-phase reactions, as well as surface reactions of Si-related radicals and atomic hydrogen. The nucleation of crystallites is related to the Si-H complex, accompanied by the compressive stress caused by breaking the Si Si bond due to atomic hydrogen. The nucleation is followed by epitaxial-like growth...
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