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A K-band power amplifier (PA) module with on-chip input and output matching network was fabricated in standard 130-nm CMOS process with 1.5-V supply voltage. The fully integrated PA module consists of 2-stage pseudo-differential cascode configuration PA and on-chip stacked balun based on transformer. At 26GHz, the PA achieved 18.6-dB small-signal gain, 12.2-dBm saturated output power and 22.4% power...
This paper presents a 60-GHz CMOS power amplifier (PA) with efficiency enhancement at power back-off. To boost the amplifier performance at millimeter-wave (mm Wave) frequencies, the neutralized amplifier stage is optimized with input transformer. Furthermore, the power combining techniques are used to enlarge the output power and enhance the efficiency at power back-off as well. The transformer-based...
This paper describes the design and analysis of a four-stages 60GHz SiGe BiCMOS power amplifier. The proposed circuit uses single-ended common-emitter topology that draws 72mW from 1.8V supply. It is able to deliver 12.1dBm output, 17.4dB power gain with a peak 14.1% PAE at its compression point. The S21 has a 3dB bandwidth from 55GHz to 67GHz, which covers the whole of 60GHz band. The power amplifier...
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