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Well-defined room-temperature photoluminescence (PL) was observed from 4H-SiC films on AlN/Si(100) complex substrates grown at temperatures below 1150 °C by the chemical vapor deposition method. The PL spectrum consists of three major emission peaks in the vicinities of 3.03, 3.17 and 3.37 eV. By the combination of experimental measurements and theoretical analysis, the origins of the PL emission...
The temporal development of incident electromagnetic plane waves across semiconductor quantum dots (QDs) is analyzed by the finite-difference time-domain method. By coating the QDs using thin metal films, surface plasmon polaritons (SPPs) can be created. As illustration, our modeling approach is applied to fluorescent multiphoton quantum dots made of cadmium sulphide of particular size (3.7 nm) and...
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