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In this review paper different designs based on stacked p-i'-n-p-i-n heterojunctions are presented and compared with the single p-i-n sensing structures. The imagers utilise self- field induced depletion layers for light detection and a modulated laser beam for sequential readout. The effect of the sensing element structure, cell configurations (single or tandem), and light source properties (intensity...
Characteristics of a tunable wavelength filter in a-SiC:H multilayered stacked p-i'i-n graded cells are studied both theoretically and experimentally. Three different architectures are tested for a proper fine tuning of the spectral sensitivity. The simplest configuration is a two terminal p-i-n photodiode where the active intrinsic layer is a double layered a-SiC:H/a-Si:H thin film. In the others...
Results on the use of a double a-SiC:H p-i-n heterostructure for signal multiplexing and demultiplexing applications in the visible range are presented. Pulsed monochromatic beams together (multiplexing mode), or a single polychromatic beam (demultiplexing mode) impinge on the device and are absorbed, accordingly to their wavelength. Red, green and blue pulsed input channels are transmitted together,...
Optimized a-SiC:H multilayer devices based on two different tandem configurations (TCO/pinpi'n/TCO and TCO/pini'p/TCO) are compared and tested for proper image recognition and color separation process using an optical readout technique. In both configurations the doped layers are based on a-SiC:H to increase image resolution and to prevent image blurring. To profit from the light filtering properties...
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