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GaN HEMT devices provide significant advantages over silicon MOSFET with lower gate charge, faster switching speed and smaller reverse recovery charge. It is hopeful to use this device to get high efficiency and high power density compatibly. A GaN HEMT device based full-bridge single-phase inverter with switching frequency 260kHz is proposed to evaluate the advantages of GaN power transistors in...
LLC resonant converter is concerned for its inherent soft switching features. What's more, Gallium Nitride high electron mobility transistors (GaN HEMT) has smaller on-state resistor and much smaller gate charge and junction capacitors compared with the silicon MOSFET. In this paper, a LLC resonant converter with high efficiency based on 600V GaN HEMT is presented. Controller design procedure is discussed...
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