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Plasma atomic layer etching (ALE) processes for SiO2 and Si3N4 and reactive ion etching (RIE) processes for SiO2 with hole patterns were developed using C4F8 and the low global warming potential gases of perfluoroisopropyl vinyl ether (PIPVE) and perfluoropropyl vinyl ether (PPVE). The ALE windows of SiO2 and Si3N4 were in the range of 50.0–57.5 V for all precursors. Etch per cycle of SiO2 was determined...
The plasma atomic layer etching (ALE) process for Ru was developed with surface fluorination and ion bombardment. We employed two methods for surface fluorination: (i) fluorocarbon deposition using CHF3 or C4F8 plasmas and (ii) chemisorption and diffusion with CF4 plasma. C4F8 plasma generated a more fluorine rich fluorocarbon layer on the Ru surface compared with CHF3 plasma, and a higher etch per...