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We report on detection of terahertz radiation by using bilayer graphene-based FET with asymmetric grating gates. The device was fabricated with a stack of h-BN/Graphene/h-BN with a back gate as well as an asymmetric dual grating top gates. It was subjected to terahertz radiation at frequencies of 150 and 300 GHz at 4K and a clear photocurrent was obtained.
Electron tunneling is receiving increased emphasis as the physical mechanism of operation in emerging devices that seek to mitigate power dissipation issues in aggressively scaled CMOS technology. A tunneling field-effect transistors (TFET) consisting of a gated p-i-n junction is arguably the best known example. In a separate class of tunneling devices, consisting of two semiconducting layers separated...
We report on the fabrication and electrical characterization of etched graphene single electron transistors (SETs) of various sizes on hexagonal boron nitride (hBN) in high magnetic fields. The electronic transport measurements show a slight improvement compared to graphene SETs on SiO2. In particular, SETs on hBN are more stable under the influence of perpendicular magnetic fields up to 9 T in contrast...
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