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CMOS-compatible GaN-on-silicon technology with excellent D-mode MISHFET performance is realized. A low specific contact resistance Rc (0.35 Ω-mm) is achieved by Au-free process. MIS-HFET with a gate-drain distance (LGD) of 15 μm exhibits a large breakdown voltage (BV) (980 V with grounded substrate) and a low specific on-resistance (R ON,sp) (1.45 mΩ-cm2). The importance of epitaxial quality in a...
Convex optimization plays an important role in science and engineering research. In many signal processing applications, convex optimization is one of the critical mathematical tools. For example, robust adaptive beamformer is always formulated as quadratic optimization problem with some linear or quadratic constraints. In this paper, we review some of the progresses of our group on using Constraints...
The effect of early failure model on upstream EM reliability and its improvements are investigated in a 45nm CMOS process. The effective process optimizations of tapered via profile by organic under layer (ODL) over etch (OE) at chamfer area and enlarged trench CD have been analyzed and discussed. Recent observations shown tapered via profile at chamfer area can get much larger angle for barrier seed...
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