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This work numerically elucidates the effects of dopant-segregated layers on the cell window in multi-bit Schottky barrier charge-trapping cells. Successive injection-trapping iteration analysis was performed to properly study the coupling of trapped charges and Schottky barrier lowering during cell programming. The results showed the dopant-segregated profiles have a key function in determining the...
This study experimentally examines the reliability impacts of high-speed 3-bit/cell Schottky barrier nanowire charge-trapping memories. Unique Schottky barrier junctions strongly enhance hot-carrier generation, ensuring high-speed multi-level programming at low gate voltages. However, strong injected gate currents might cause potential retention and endurance concerns when the programming voltage...
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