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We report the fabrication of an electrolyte–insulator–semiconductor (EIS) device with an improved sensitivity brought about by texturization of the functionalized dielectric at the dielectric/electrolyte interface by electrostatic attachment of nanoparticle and mesoparticle. Improvement in sensitivities up to 42% over the nontextured (control) devices was obtained with SiO2 particles on SiO2 dielectric...
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