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The magnetic and electronic transport properties of the antiperovskite Mn 3 NiN thin film deposited on quartz substrate using magnetron sputtering were investigated. The film shows a (100) preferred orientation. It is worthwhile noting that a positive magnetoresistance (MR) effect was found in the whole measured temperature region and the maximum MR value by 31% was obtained at about 300K...
The antiperovskite structure Mn 3 Cu(Ge)N thin films were grown on single crystal Si (100) substrates by facing target magnetron sputtering. It is found that the films exhibit (100) preferred orientation. Ge-doping does not change the antiperovskite structure but leads to obvious changes in surface morphologies, magnetic and electronic transport properties. As a function of temperature, the...
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