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This article presented a Gunn oscillator with plane substrate circle cavity. A 2-port model is present to determine both the oscillating frequency and output circuit. This oscillator is working in its third oscillating mode which provides a output power about 15.0dBm and the phase noise about -85dB at offset 100KHz.
Based on the half mode substrate integrated waveguide (HMSIW) technology, a new type of Gunn diode oscillator was developed. Main emphasis was placed on HMSIW resonant cavity structure. Restrictions on the performance of the oscillators imposed by packaged networks and the self-characteristic of the Gunn diode transistor devices have been analyzed. This oscillator's performance is characterized by...
Based on the substrate integrated waveguide (SIW) technology, a new type of Ka-band Gunn Diode Oscillator was developed. Main emphasis was placed on SIW resonant cavity structure. Restrictions on the performance of the oscillators imposed by packaged networks and the self-characteristic of the Gunn diode devices have been analyzed. This oscillator performance is characterized by a medium level output...
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