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A systematic and consistent approach to the thermal modeling and measurement of GaN on SiC HEMT power transistors is described. Since the power density of such multilayered wide bandgap structures and assemblies can be very high compared with other transistor technologies, the application of such an approach to the prediction of operating channel temperatures (and hence product lifetime) is important...
GaN-based devices offer significant advantages for next generation military and commercial systems. Military systems benefit from high power densities of 4 to 7 W/mm depending on bias conditions along with efficiencies over 60% at frequencies through X-band, and commercial systems take advantage of excellent linearity as well. In this paper, we will review a number of commercial products that only...
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