The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
•InN epilayers were prepared by plasma-assisted MBE at different nitrogen fluxes.•The nitrogen flux is critical to influence the physical properties of the InN layers.•InN samples exhibited streaky cum spotty RHEED patterns at different N2 fluxes.
In the present work, we report the dependence of lithium-ion (Li+) doping concentration on structure, optical and electrical properties of NiO films fabricated by radio frequency (rf) magnetron sputtering. It was found that the NiO grains were increased with increase in lithium-ion concentration from an anomalous state to a cubic shape following the NaCl-type structure. The NiO films presented highly...
We have demonstrated that the thickness of the catalyst layer plays a significant role in the morphology and the material quality of the InN nanocolumns grown on Si(111) substrate by plasma-assisted molecular beam expitaxy using vapor-liquid-solid method. A systematic investigation of In catalyst films was undertaken, revealing that high density uniform InN can not be obtained when the In catalyst...
The NiO films were prepared on GaN substrate by depositing an InN epilayer on GaN by plasma-assisted molecular beam epitaxy (PAMBE) and then growing NiO films on InN epilayer by radio frequency (rf) magnetron sputtering. We studied the effect of InN epilayers on structure, surface morphology, electrical and optical properties of NiO films using X-ray diffraction (XRD), scanning electron microscopy...
The formula for jamesonite is Pb4FeSb6S14 (or 4PbS·FeS·3Sb2S3). This paper proposes a novel method for the separation and enrichment of PbS and Sb2S3 from jamesonite by vacuum distillation. The experiments were carried out at temperatures ranging from 1073 K to 1473 K and at pressures less than 10,000 Pa. The amount of Sb, Pb, and Fe in the volatiles and residues was determined by chemical titration...
In the present work, we report the growth of NiO films fabricated by Photo-assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD). The growth parameter of nickel flux affects the crystallographic, morphological and optical properties of NiO films, which were analyzed using X-ray diffraction (XRD), scanning electron microscopy (SEM) and ultraviolet–visible spectrophotometer (UV). It is found that...
InN epilayers were deposited on nitrided sapphire substrates using plasma-assisted molecular beam epitaxy (PAMBE) system. The physical properties of InN films under different growth temperatures were thoroughly studied. The XRD results indicated that as-prepared InN films without Indium droplets were preferentially oriented in the c-axis direction. The SEM results showed that the InN films grown in...
InN epilayers were prepared on c-plane (0001) sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). We studied the effect of nitridation on structure, surface morphology, electrical and optical properties of InN films using X-ray diffraction (XRD), Reflection high-energy electron diffraction (RHEED), scanning electron microscopy (SEM), atomic force microscopy (AFM), Hall and photoluminescence...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.