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A fully integrated K-band transformer based power amplifier with neutralization technique is proposed and fabricated in 90-nm CMOS technology. Several cascode cells are combined together as differential power cells. On-chip transformers and current combing topology are used to combine amplifiers as well as to reduce the problem of output power loss. In order to improve the overall stability, neutralization...
A 60-GHz 1.2-V wideband power amplifier (PA) with a compact 4-way radial power combiner implemented in 90-nm CMOS process is presented in this paper. The transformer-based radial power combiner with 1-dB insertion loss at 60 GHz and 0.043-mm2 compact size is designed for high output power combining and wideband load-pull matching. This PA achieves saturated output power (PSAT) of 20.6 dBm, maximum...
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