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Single drain select transistor (DSL) in 3D Flash memory may exhibit higher leakage as compared with DSL in 2D NAND, because of worse subthreshold swing characteristics due to poly-Si channel. Select transistor leakage suppression is essential in 3D NAND Flash Memory, in consideration of boosting potential and program disturbance. Compared to single Si drain select transistor in 2D planner Flash Memory,...
The orthogonal frequency division multiple access (OFDMA) is widely used for its characteristics of high data transmission rate and the flexibility of bandwidth allocation. In this paper, an equivalent SISO model for the MIMO STBC system was presented, and a Multi-user multirate adaptive sub-carrier allocation scheme was proposed also. We apply the algorithm to the OFDMA. The simulations results show...
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