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This work presents a self-consistent two-dimensional (2-D) simulation method with unified physical models for different operation regimes of charge trapping memory. The simulation carefully takes into consideration the tunneling process, charge trapping/de-trapping mechanisms, and 2-D drift-diffusion transport within the storage layer. A string of three memory cells has been simulated and evaluated...
This paper presents a two dimensional numerical simulation on the program and retention operation of charge trapping memory. The developed simulator self-consistently solves two-dimensional Poisson equation, carrier continuity equation and trapped charge conservation equation. Driftdiffusion transport scheme is used for modeling the charge transport in the trapping layer. Major physical models, such...
A comprehensive simulation method for endurance reliability issues in charge trapping memory is developed. For this purpose, a practical algorithm is carefully designed to investigate the cycling performance of charge trapping memory. The models that account for the generation of substrate/tunneling oxide interface trapped charge and oxide trapped charge are incorporated into the simulation. The influence...
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