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As the density of NAND flash memory grows, the cell-to-cell interference caused by capacitive coupling among neighboring cells becomes a critical source of bit errors. Thus, it is important to precisely measure the value of capacitances to remove the interferences and lower the bit-error rate. Previous approaches have employed the least mean square (LMS) or the least square adaptive filtering approaches...
High-density NAND flash memory suffers from the data retention problem because even small charge leakage incurs a large threshold voltage shift as the transistor size shrinks. In this paper, we develop a decision directed estimation (DDE) algorithm to know the effects of charge leakage in NAND flash memory using the error pattern of the accessed data. While the conventional sensing directed estimation...
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