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PbZrO3 (PZO)‐based antiferroelectric thin films are of great interest due to their high‐power density and fast charging and discharging capability. However, the problems of low breakdown strength and inferior energy storage density of PZO films have not been well solved. In this work, the insulating MgO as the blocking interlayer is inserted into PbZrO3 films (abbreviated as P/M/P), which can inhibit...
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