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The thin-film solid-state reaction between elemental Ge and Mn across chemically inert Ag layers with thicknesses of (0, 0.3, 1 and 2.2µm) in Ge/Ag/Mn trilayers was studied for the first time. The initial samples were annealed at temperatures between 50 and 500°C at 50°C intervals for 1h. The initiation temperature of the reaction for Ge/Mn (without a Ag barrier layer) was ~ 120°C and increased slightly...
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