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Transformations of structural defects, the hydrogen state, and electrophysical properties of silicon treated in hydrogen plasma are studied. Treatment in plasma (150°C) produces bands in Raman spectra at 2095 and 2129 cm–1 that are associated with scattering by Si–H vibrations. Subsequent heat treatment (275°C) causes a band for gaseous molecular H2 to appear at 4153 cm–1. A comparison of Raman spectra...
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