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The results of studying the structure and composition of the surface layer of a Si plate after 64Zn+ ion implantation and thermal annealing in oxygen are presented. The ions are implanted into a substrate heated to a temperature of 400°C. Radiation defects and profiles of implanted Zn and oxygen diffused into the substrate are studied by means of 1.7-MeV He+-ion Rutherford backscattering spectroscopy...
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