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The dependences of photo-emf of metal-insular-semiconductor structures based on n-Hg1–xCdxTe (x = 0.21–0.23) on bias voltage, frequency, and temperature are experimentally studied. The photoelectrical characteristics of the metal-insulator-semiconductor structures based on epitaxial n-Hg1–xCdxTe (x = 0.21–0.23), including those taking into account the presence of near-surface graded-gap layers having...
The results of investigations into the complex admittance of the MIS-structures based on heteroepitaxial MBE Hg1–xCdxTe with quantum wells (QW) in the test-signal frequency range 1 kHz – 2 МHz at temperatures 8–300 K are reported. The thickness of single HgTe QWs was 5.6 and 7.1 nm, the content in the 35-nm thick barrier layers – 0.65 and 0.62, respectively.
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