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Graphene nanoribbon FETs (GNRFETs) have emerged as a promising candidate for nanoelectronics applications. This paper summarizes (i) current understanding and prospects for GNRFETs as ultimately scaled, ideal ballistic transistors, (ii) physics-based modeling of GNRFETs to support circuit design and CAD, and (iii) variability and defects in GNRs and their impact on GNRFET circuit performance and reliability.
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