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Recently, there has been much interest in wide band-gap wurtzite semiconductors such as group-III nitrides (GaN, AlGaN, and InGaN) and ZnO. Ion-beam-defect processes are considerably more complex in these wurtzite semiconductors than in the case of both elemental and group-III-V cubic semiconductors. This brief review focuses on our recent studies of the following aspects of ion-beam-defect processes:...
The effect of ion species on the damage buildup behavior in wurtzite GaN under bombardment at liquid nitrogen temperature (LN 2 ) is studied by a combination of Rutherford backscattering/channeling spectrometry and transmission electron microscopy. Results show that both the density of collision cascades and chemical effects of implanted species affect the damage buildup behavior during bombardment...
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