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In this work, controlled band gap modifications in AlInGaAs/InGaAs quantum well structures using different encapsulating layers are studied and compared. X-ray photoelectron spectroscopy was used to investigate the interfacial reaction between the quantum well structure and dielectric capping layer.
We discuss the role of stress on diffusion of vacancies and interstitials theoretically. The stresses induced by SiO2 and TiO2 dielectric layers on InP and GaAs based QD structures are calculated and some reported quantum dot intermixing results are explained by a stress-induced forced interdiffusion model.
In this work, we studied the proton and arsenic ion implantation-induced intermixing in InGaAsP/InGaAs and InAlGaAs/InGaAs quantum wells. The results were compared and discussed based on the defect formation and evolution process under the different implantation conditions and QW barrier materials.
We have investigated the quantum well interdiffusion of Inx Ga1-xAs/InP QWs with different In composition using proton irradiation. 50 KeV proton implantation with various doses from 5times1014 H/cm2 with subsequent annealing at 750deg for 60 sec were used to induce the atomic intermixing process. Photoluminescence was performed to measure the bandgap energy shift between the unimplanted and implanted...
Enhancement of interdiffusion in GaAs/AlGaAs quantum wells (QWs) due to anodic oxides was studied. Photoluminescence and diffused QW modeling were used to understand the effects of intermixing on the QW structure. The activation energy is similar to those obtained from SiO/sub 2/ cap annealed quantum well structures.
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