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In this work, we studied the proton and arsenic ion implantation-induced intermixing in InGaAsP/InGaAs and InAlGaAs/InGaAs quantum wells. The results were compared and discussed based on the defect formation and evolution process under the different implantation conditions and QW barrier materials.
Ultrafast charge carrier dynamics in semiconducting materials ultimately determine the performance of photoconductive terahertz (THz) emitters and receivers. Ion implantation of III-V semiconductors allows carrier dynamics to be tailored for a particular application, and thus the technique is increasingly being applied to the development of advanced materials for terahertz photonics. In this talk...
The spectral width of terahertz emission from ion-implanted terahertz emitters increases with ion damage, owing to ultrafast carrier capture. Carrier dynamics simulations reinforce these findings. Optical-pump, terahertz-probe experiments confirm the sub-picosecond lifetimes of these materials.
We have investigated the quantum well interdiffusion of Inx Ga1-xAs/InP QWs with different In composition using proton irradiation. 50 KeV proton implantation with various doses from 5times1014 H/cm2 with subsequent annealing at 750deg for 60 sec were used to induce the atomic intermixing process. Photoluminescence was performed to measure the bandgap energy shift between the unimplanted and implanted...
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