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In recent times, the power system has expanded in an unprecedented way owing to technological innovations and geographical dimensions. For ensuring proper operation, monitoring and control, a system called Wide Area Measurement System (WAMS) has evolved. Phasor Measurement Unit (PMU) is one of the vital components of WAMS. Any failure in PMU has catastrophic consequences on WAMS. Thus reliability...
It has been shown that sub 100nm SRAM is particularly sensitive to stochastic device variability. In this paper we consider two correlated figures of merit for SRAM, Static Noise Margin (SNM) and Read Current. For the purposes of this paper 1,000 3D atomistic simulations of microscopically different 25nm P and N bulk MOSFETs were performed, and statistical compact models were then extracted for each...
This paper proposes an algorithm to obtain a parameterized reduced order model for system level representations of large power distribution planes over a wide frequency of interest. The key advantage of the proposed algorithm is that, the electromagnetic behaviour of the plane can be efficiently modeled for a wide variation of design parameters without the need to regenerate the reduced model for...
Widespread application of computer network has evoked a lot of interest for cyber attackers to target these systems. In addition to cryptography based protective techniques such as authentication and authorization, several defense measures, like Intrusion Detection and Tolerance, and tools are employed to protect networks thereby, making security a critical issue. Therefore, the need for defining,...
We study, in detail, statistical threshold voltage variability in a state of the art n-channel MOSFET introduced by line edge roughness. A large sample of 35,000 transistors with microscopically different LER patterns was simulated using the Glasgow 3D `atomistic' device simulator. Such large-scale simulation has been enabled by advanced grid computing technology. The results show that the statistical...
Tissue classification algorithms developed for magnetic resonance images commonly assume a Gaussian model on the statistics of noise in the image. While this is approximately true for voxels having large intensities, it is less true as the underlying intensity becomes smaller. In this paper, the Gaussian model is replaced with a Rician model, which is a better approximation to the observed signal...
The EPSRC pilot project Meeting the Design Challenges of nanoCMOS Electronics (nanoCMOS) is focused upon delivering a production level e-Infrastructure to meet the challenges facing the semiconductor industry in dealing with the next generation of 'atomic-scale' transistor devices. This scale means that previous assumptions on the uniformity of transistor devices in electronics circuit and systems...
The detailed analysis of a ground-breaking sample of 100,000 n-Channel MOSFETs, simulated with the Glasgow 3D device simulator, has allowed the distribution of random discrete dopant induced threshold voltage fluctuations to be constructed based on underlying physical processes. The construction may also be statistically enhanced, allowing a significant reduction in the computational effort necessary...
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