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This work claims that VO2, of interest currently for its metal-insulator phase transition properties, is also a ferroelectric material. Using a VO2 film sandwiched between two silicon dioxide layers, memory transistor structures with substantial and useful properties have been fabricated. Threshold voltage shifts are opposite of charge trapping phenomena and consistent with ferroelectric polarization...
We report a novel phase transition memory (PTM) where we employ electric field and temperature induced phase transition to store, erase and read information within a single electronic element. The devices operate without the need for charge transport through insulator films for charge storage in a floating gate thus avoiding a variety of retention and reliability issues of the conventional floating...
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