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We report a novel phase transition memory (PTM) where we employ electric field and temperature induced phase transition to store, erase and read information within a single electronic element. The devices operate without the need for charge transport through insulator films for charge storage in a floating gate thus avoiding a variety of retention and reliability issues of the conventional floating...
There have been numerous proposals for use of metal–oxide materials as an alternative to semiconductors in field-effect transistors (FET), as current Si FET technology inevitably encounters intrinsic scaling limitations. We report on device-independent power–delay characteristics of potential VO 2 -based field induced Mott transistors and compare scaling limits to that of Si. Since the critical...
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