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A new polymeric gate dielectric interlayer of a cross-linkable poly(styrene-random-methylmethacrylate) copolymer is introduced with a good thermal and chemical resistance in bottom gate Ferroelectric Field Effect Transistor (FeFET) memory with pentacene active layer and ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) one. A thin uniform PVDF-TrFE film was successfully formed...
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