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This paper presents a 3.5 GHz aluminum nitride (AlN) microelectromechanical system (MEMS) resonator. The high frequency resonance is attained by exploiting the high phase velocity S1 Lamb mode in an AlN thin film. Finite element analyses (FEA) are employed to show a high phase velocity larger than 50000 m/s and a large electromechanical coupling of 3.6% for S1 when hAlN=0.1λ. As predicted by the simulation,...
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