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A new type of nitride light-emitting diodes structure is proposed and investigated in this paper. The structure mainly includes n-GaN layer, multiple quantum wells layer, p-GaN layer,Ag inserts in p-GaN,TiO2-Ag grating and TiO2 triangular structure. The internal quantum efficiency is enhanced by the local surface plasmon and the coupling of the quantum wells, the light luminous area is increased by...
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