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Multilayer InSe with a thickness above ~20 nm is a direct semiconductor proposed for solar-energy conversion and to use in flexible optoelectronics. We demonstrate herein a superior 1000-nm light emission and absorption capability of two-dimensional (2D) multilayer InSe studied by photoluminescence (PL) and photoconductivity (PC) experiments. Layered crystals of InSe have been grown by chemical vapor...
The effect of surface sulfidation of Si on electronic transport of heterojunction diodes based on the p-type Cu2ZnSnS4 (CZTS) and n-type Si is investigated. The temperature-dependent current–voltage (I–V) characteristics of CZTS/Si diodes with and without sulfide treatment are measured in the temperature range of −30 ~ 90 °C. The temperature dependence of forward bias I–V characteristics can be explained...
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