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An intrinsic CdZnTe ingot and an Indium (In) doped CdZnTe:In ingot were grown by the modified Bridgman (MB) method, respectively. The effects of In-doping on the properties of CdZnTe single crystals have been analyzed in detail. Leakage current–bias voltage (I–V) measurement shows that the resistivity of CdZnTe increases three orders after In is introduced into the crystal, because cadmium (Cd) vacancies...
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