The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The structures and polarity of group‐III nitride semiconductors are theoretically investigated by calculating individual energy of polar surfaces and interfaces using density functional calculations. Using the surface and interface energies, we demonstrate phase diagrams as functions of temperature and pressure for polar AlN on 6H‐SiC(0001) substrate as well as polarity inversion of GaN on N‐polar...
The atomic and electronic structures of silicon nanowires grown along the [110] direction are systematically investigated using first-principles pseudopotential method. For nanowires whose diameters are ∼4nm, the calculations taking account of various surface reconstructions both with and without hydrogen atoms on nanowire facets demonstrate that the reconstruction on nanowire facets is strongly dependent...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.