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Epitaixial relationship between AlN thin films and Si(001) substrates is systematically investigated using the empirical interatomic potential on the basis of the experimental findings for AlN on Si(001) grown by plasma‐assisted molecular beam epitaxy and reactive magnetron sputtering. The calculated results for the structural stability of AlN on Si(001) reveal that (0001)‐oriented 2H‐AlN becomes...
The atomic arrangements in zinc blende structured GaN x As 1−x thin films coherently grown on V-grooved substrates are theoretically investigated using empirical interatomic potentials and Monte Carlo simulation. The resultant atomic arrangements in GaN x As 1−x strongly depend on concentration x and substrate lattice parameter a sub . Surface segregation of...
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