The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Polytypism in semiconductors including SiC and ZnS is systematically investigated using ab initio pseudopotential approach for the total energy calculations with/without vacancy in 3C (zinc blende), 6H, 4H, and 2H (wurtzite) structures. The calculated total energy E among 3C, 6H, 4H, and 2H implies that 3C and 4H are the most favorable for SiC, while ZnS prefers 3C. Furthermore, it should be noted...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.