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We present a comprehensive study on the influence of Ar + ion milling parameters in the range of low acceleration voltages (0.5–6kV) and etching angles (3–10°) on the quality of standard high resolution Si TEM samples. The quality was assessed by the evaluation of HR-TEM images acquired from real TEM samples considering the thickness of the amorphous layer and the interlocking between crystalline...
SiGe multi quantum well structures were investigated by convergent-beam electron diffraction (CBED) measurements. Detailed layer characterizations were performed by acquiring series of bright field CBED patterns in the form of a line scan across the nanostructures in scanning transmission electron microscopy (STEM) mode. From the higher order Laue zone (HOLZ) lines the local lattice parameters were...
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