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Ion beam mixing has emerged as a technique for understanding reactivity and chemistry at metal/Si interface and may find its applications in the field of microelectronics. We have investigated ion beam mixing at Co/Si interface induced by electronic excitation using 120MeV Au +9 ion irradiation at different fluences, varying from 10 12 to 10 14 ions/cm 2 . Mixing was...
Ion beam mixing is a useful technique to produce modifications at the surface and interface of the solid material. In the present work, ion beam induced modifications at Co/Si interface using 120MeV Au-ion irradiation has been studied at ion fluences in the range of 10 12 to 10 14 ions/cm 2 by secondary ion mass spectroscopy (SIMS) technique and calculated mixing efficiency...
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