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This paper presents a chip set of RF front-end circuits using 65-nm CMOS technology. The chip set includes a LNA, a down-conversion mixer, an up-conversion mixer and a medium power amplifier. The LNA has the 3-dB bandwidth from 68 to 75 GHz with a peak value of 17 dB. The down-conversion mixer has a conversion loss of better than -5 dB from 53 to 73 GHz at 4 dBm LO power. The up-conversion mixer has...
A low voltage and low power 60 GHz low noise amplifier (LNA) using 90 nm standard MS/RF CMOS technology is presented in this paper. For the low voltage applications, a three-stage common source configuration is utilized. By using forward-body-bias, our LNA can operate at 0.7 V supply voltage and consumes 4.9 mW dc power while maintaining a peak gain of 13 dB at 55 GHz and 12.6 dB at 60 GHz with a...
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