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Three‐dimensional models, coupling fluid flow and heat transfer, have been adopted to analyze influences of the process parameters on the temperature uniformity in an industrial MOCVD reactor. Important factors, such as the inlet gas flow, the susceptor rotation, the heater power, the distance between the heat shield and the susceptor (d1), as well as the distance between the heater and the susceptor...
Gallium nitride (GaN) is widely used in light-emitting diode (LED) devices due to its wide bandgap and excellently optoelectronic performance. The efficiency and lifetime of LEDs are critically determined by quality of GaN, for example, growth uniformity. Metal-organic chemical vapor deposition (MOCVD) is the most popular technique to grow high-quality GaN epitaxial layers. Growth uniformity is influenced...
We have developed a novel MOCVD reactor, which is called buffered distributed spray (BDS) MOCVD reactor, for the multiple wafer growth of films of III–V materials. In the present study, a fundamental and multi-field model based on the computational fluid dynamic (CFD) simulation of coupled flow, heat and mass transfer is presented to describe the epitaxial growth of gallium nitride (GaN). It is investigated...
A multi-physics multi-scale modeling platform has been developed and it has been applied to various stages of the LED manufacturing such as MOCVD reactor design, epitaxial growth based on silicon wafer, chip design and manufacturing, module packaging and assembly, and specific lamps. Discussions are also given to the ultra-scalable reactor design, material constitutive modeling, and curvature evolution...
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