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In order to understand the diffusion of group III ad-atoms (Al, Ga, In) on non-polar gallium nitrides surface, the first-principles calculations were performed using the Car-Parrinello molecular dynamics (CPMD) method. Our calculation results reveal that diffusion barriers of Aluminum ad-atom on non-polar gallium nitride surface is anisotropy, while the diffusion barriers of Gallium and Indium ad-atoms...
Currently, most gallium nitride based light emitting diodes (LEDs) are fabricated with polar c-plane [0001] direction. This orientation of gallium nitride has a large polarization electric field. Therefore, the device performance is adversely affected by strain induced piezoelectric polarization. The strain affects crystalline quality as well as optical and electrical properties of LED epitaxial film...
A multi-physics multi-scale modeling platform has been developed and it has been applied to various stages of the LED manufacturing such as MOCVD reactor design, epitaxial growth based on silicon wafer, chip design and manufacturing, module packaging and assembly, and specific lamps. Discussions are also given to the ultra-scalable reactor design, material constitutive modeling, and curvature evolution...
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