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We measure the opto-electronic properties of femtosecond-laser-ablated GaAs and demonstrate its utility towards THz devices. In particular, we show that laser-ablated THz antennas are 65% more efficient than non-ablated antennas at high powers. Our results demonstrate the possibility of using femtosecond-laser-ablation as a cost-effective technique to engineer material properties for THz devices.
The fabrication of an electrically pumped lead salt- based edge-emitting laser on a polished [110]-oriented PbSnSe substrate is presented. The laser structure was grown by molecular beam epitaxy and consisted of a PbSrSe-PbSe multiple quantum- well active region sandwiched between PbSrSe confinement layers. Pulsed laser emission was observed at lambda = 5.2 mum wavelength up to 158 K with a maximum...
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