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Strain induced band structure change of the monolayer MoS2 has great potential in applying this material in many reconfigurable nanoelectromechanical systems. Here in this work we report the investigation of the band structure subjecting to strains in different directions. It is found from the first principle simulation that the effect is almost independent on the direction of the applied strain....
A new sensor device based on the principle of the nanomechanical transistor (NMT) is postulated. The sensor consists of two mechanically coupled resonators, of which one is embedded in the NMT as the active resonator, and the other purely acts as the passive sensor. Numerical analysis on the device has been presented using coupled mechanical and charge transfer equations. The results show that high...
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