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The effects of double pulse delay time and ambient pressure on femtosecond laser ablation of Si are studied by means of photoluminescence and morphology analysis. Detailed scan of double pulse delay is performed at vacuum (2Pa) and atmospheric pressure, and detailed scan of pressure is performed at three double pulse delay times of 0.2ps, 53.13ps and 106.47ps. It is found that, at various fluences,...
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