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ZnO thin films with ZnO homo-buffer layer were grown on Si (111) substrates by PLD. The buffer layers, about 15 nm thick, were deposited at 300°C,400°C and 500°C, respectively, under a base pressure of 1×10−3 Pa. The main ZnO layers (about 400nm thick) were grown at 650 °C for 90 min in an oxygen ambience of 60 Pa. All the films were annealed at 500 °C for 20 min in an oxygen ambience of 105 Pa. PL...
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